Reliable strain measurement in transistor arrays by robust scanning transmission electron microscopy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4821278
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1. Analysis and Characterization of Device Variations in an LSI Chip Using an Integrated Device Matrix Array
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3. Direct Mapping of Strain in a Strained Silicon Transistor by High-Resolution Electron Microscopy
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5. Measurement of incomplete strain relaxation in a silicon heteroepitaxial film by geometrical phase analysis in the transmission electron microscope
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