Analysis of InGaN light-emitting diodes with GaN-AlGaN and AlGaN-GaN composition-graded barriers
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4879252
Reference20 articles.
1. Prospects for LED lighting
2. Natural white light
3. Quaternary ultraviolet AlInGaN MQW laser diode performance using quaternary AlInGaN electron blocking layer
4. Carrier distribution in InGaN/GaN tricolor multiple quantum well light emitting diodes
5. On the efficiency droop in InGaN multiple quantum well blue light emitting diodes and its reduction with p-doped quantum well barriers
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1. RETRACTED ARTICLE: Enhancement of the blue photoluminescence intensity for the porous silicon with HfO2 filling into microcavities;Scientific Reports;2015-10-27
2. Effect of barrier materials on the polarization field in the active region of blue InGaN LED using Sentaurus;SPIE Proceedings;2015-09-08
3. Strong photoluminescence of the porous silicon with HfO2-filled microcavities;Applied Physics Letters;2015-06-22
4. Alternating InGaN barriers with GaN barriers for enhancing optical performance in InGaN light-emitting diodes;Journal of Applied Physics;2015-01-21
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