Electron trapping in SiO2—An injection mode dependent phenomenon
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.93128
Reference19 articles.
1. Electrochemical Charging of Thermal SiO2 Films by Injected Electron Currents
2. I‐V characteristics of MOS capacitors with polycrystalline silicon field plates
3. Optically induced injection of hot electrons into SiO2
4. The Effects of Processing on Hot Electron Trapping in SiO2
5. Electron trapping by radiation‐induced charge in MOS devices
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1. Injection Spectroscopy of Thin Layers of Solids;Internal Photoemission Spectroscopy;2014
2. References;Internal Photoemission Spectroscopy;2008
3. Injection spectroscopy of localized states in thin insulating layers on semiconductor surfaces;Progress in Surface Science;1994-12
4. Kinetics of trapping, detrapping, and trap generation;Journal of Electronic Materials;1992-07
5. Hot carrier lifetime and trap cross-section in MOSFET oxide;International Journal of Electronics;1992-04
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