Compositional analysis of molecular beam epitaxy grown InyGa1−yAs/GaAs/AlxGa1−xAs quantum wells by determination of film thickness
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.352889
Reference13 articles.
1. Role of strain and growth conditions on the growth front profile of InxGa1−xAs on GaAs during the pseudomorphic growth regime
2. Relaxation of strain within multilayer InGaAs/GaAs pseudomorphic structures
3. A new secondary ion mass spectrometry technique for III‐V semiconductor compounds using the molecular ions CsM+
4. Interfacial properties of (Al,Ga)As/GaAs structures: Effect of substrate temperature during growth by molecular beam epitaxy
5. The interfacial morphology of strained epitaxial InxGa1−xAs/GaAs
Cited by 14 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Output power enhancement of 100% for quaternary GaInAsSb/AlGaAsSb semiconductor disc lasers grown with a sequential growth scheme;Journal of Crystal Growth;2009-08
2. Nondestructive characterization of nanoscale layered samples;Analytical and Bioanalytical Chemistry;2008-11-08
3. SIMS depth profiling of InGaAsN/InAlAs quantum wells on InP;Applied Surface Science;2003-01
4. Quaternary GaInAsN with high In content: Dependence of band gap energy on N content;Applied Physics Letters;2002-04-08
5. Molecular beam epitaxy of GaAs/AlxGa1−xAs/InyGa1−yAs heterostructures for opto-electronic devices: control of growth parameters;Applied Surface Science;1996-07
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3