Quaternary GaInAsN with high In content: Dependence of band gap energy on N content
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1467612
Reference13 articles.
1. GaInNAs: A Novel Material for Long-Wavelength-Range Laser Diodes with Excellent High-Temperature Performance
2. A 1.3-µm GaInNAs Laser Diode with a Lifetime of over 1000 Hours
3. Low Threshold and High Characteristic Temperature 1.3 µm Range GaInNAs Lasers Grown by Metalorganic Chemical Vapor Deposition
4. High power CW operation of InGaAsN lasers at 1.3 [micro sign]m
5. Growth and characterization of small band gap (∼0.6 eV) InGaAsN layers on InP
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