SIMS depth profiling of InGaAsN/InAlAs quantum wells on InP-Reference-Cited by-同舟云学术

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SIMS depth profiling of InGaAsN/InAlAs quantum wells on InP

Published:2003-01 Issue: Volume:203-204 Page:486-489
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Maier M.,Serries D.,Geppert T.,Köhler K.,Güllich H.,Herres N.

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference2 articles.

1. GaInNAs: A Novel Material for Long-Wavelength-Range Laser Diodes with Excellent High-Temperature Performance

2. Compositional analysis of molecular beam epitaxy grown InyGa1−yAs/GaAs/AlxGa1−xAs quantum wells by determination of film thickness

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1. Lasers and photodetectors for mid-infrared 2–3 μm applications;Journal of Applied Physics;2008-11

2. A review of energy bandgap engineering in III–V semiconductor alloys for mid-infrared laser applications;Solid-State Electronics;2007-01

3. Quantitative analysis of the Ge concentration in a SiGe quantum well: comparison of low-energy RBS and SIMS measurements;Analytical and Bioanalytical Chemistry;2005-12-07

4. Low energy RBS and SIMS analysis of the SiGe quantum well;Applied Surface Science;2005-09

5. Epitaxy and characterisation of dilute III–As1−yNy on GaAs and InP;IEE Proceedings - Optoelectronics;2004-10-01

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