Low energy RBS and SIMS analysis of the SiGe quantum well-Reference-Cited by-同舟云学术

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Low energy RBS and SIMS analysis of the SiGe quantum well

Published:2005-09 Issue:1 Volume:252 Page:123-126
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Krecar D.,Rosner M.,Draxler M.,Bauer P.,Hutter H.

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference8 articles.

1. Silicon/silicon-germanium multiple quantum wells grown by gas-source molecular beam epitaxy: hydrogen coverage and interfacial abruptness

2. SIMS depth profiling of InGaAsN/InAlAs quantum wells on InP

3. High-electron-mobility Si/SiGe heterostructures: influence of the relaxed SiGe buffer layer

4. Dynamic secondary ion mass spectrometry;Hutter,2002

5. F. Kastner, PhD Thesis, Johannes Kepler Universität, Linz.

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