Electronic and optical properties of deep levels in iron‐doped InAsP alloys
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.342511
Reference19 articles.
1. Semi-insulating properties of Fe-doped InP
2. A study of the deep acceptor levels of iron in InP
3. Optical and capacitance spectroscopy of InP:Fe
4. Semi-insulating In0.53Ga0.47As by Fe doping
5. Metalorganic vapor‐phase‐epitaxial growth of Fe‐doped In0.53Ga0.47As
Cited by 10 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Observation of spontaneous spin-splitting in the band structure of an n-type zinc-blende ferromagnetic semiconductor;Nature Communications;2016-12
2. Ab initio studies on the electronic structures of strained‐layer superlattices (InAs)n(InP)n(001), (n=1–5);Journal of Applied Physics;1995-03-15
3. Fe2+-Fe3+level as a recombination center inIn0.53Ga0.47As;Physical Review B;1994-04-15
4. Significance of a Nucleation Layer in Inhibiting Interfacial Pitting in InAs Films Grown by Two-Step MOVCD on (100) Inp Substrates;MRS Proceedings;1993
5. The effect of carrier densities and compensation ratios on the electron mobility of InAsxP1−x;Journal of Physics and Chemistry of Solids;1992-07
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