Metalorganic vapor‐phase‐epitaxial growth of Fe‐doped In0.53Ga0.47As
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.338163
Reference9 articles.
1. Optical response time of In0.53Ga0.47As/InP avalanche photodiodes
2. High-performance avalanche photodiode with separate absorption ‘grading’ and multiplication regions
3. Inversion-mode GaInAs MISFET ring oscillators
4. Low‐noise Ga0.47In0.53As photoconductive detectors using Fe compensation
5. High speed, ion bombarded InGaAs photoconductors
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3. Generation of continuous wave terahertz frequency radiation from metal-organic chemical vapour deposition grown Fe-doped InGaAs and InGaAsP;Journal of Applied Physics;2016-04-21
4. Generation of Terahertz Radiation from Fe-doped InGaAsP Using 800 nm to 1550 nm Pulsed Laser Excitation;Journal of Infrared, Millimeter, and Terahertz Waves;2015-12-22
5. The Role and Mechanism of Fe-ion Bombardment in creating highly resistive InGaAs layers;2006 European Microwave Integrated Circuits Conference;2006-09
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