Fe2+-Fe3+level as a recombination center inIn0.53Ga0.47As
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.49.10259/fulltext
Reference37 articles.
1. Ultrafast semiinsulating InP:Fe-InGaAs:Fe-InP:Fe MSM photodetectors: modeling and performance
2. Very high-speed metal–semiconductor–metal InGaAs:Fe photodetectors with InP:Fe barrier enhancement layer grown by low pressure metalorganic chemical vapour deposition
3. Lateral photodetectors on semi‐insulating InGaAs and InP
4. Accumulation mode Ga0.47In0.53As insulated gate field‐effect transistors
5. Liquid phase epitaxial growth of Fe‐doped semi‐insulating InGaAsP lattice matched to InP over the entire composition range
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