Significance of a Nucleation Layer in Inhibiting Interfacial Pitting in InAs Films Grown by Two-Step MOVCD on (100) Inp Substrates

Author:

Ballal A. K.,Salamanca-Riba L.,Partin D. L.

Abstract

AbstractIn this paper, we study the significance of a low temperature nucleation layer and its role in inhibiting interfacial pitting vapor deposition. Transmission electron microscopy and scanning electron microscopy studies show that severe interfacial pitting occurs for thin nucleation layers of average thicknesses of 200Å and 400Å. For these average nucleation layer thicknesses we have found that the InAs islands do not cover the entire substrate surface during the low temperature deposition. Hence, when the film is heated to a higher temperature for the growth of the remainder of the film severe pitting at the heterointerface is produced. The thermal etchpits are sources of threading dislocations, which propagate to the surface of the film. For thicker nucleation layers we observe no interfacial pitting. Our studies show that there is an optimum nucleation layer thickness for which high quality InAs films with reduced threading dislocation densities and relatively high electron mobilities are obtained. Both electrical and structural studies suggest that ∼ 800Å is an optimum thickness of the low temperature nucleation layer.

Publisher

Springer Science and Business Media LLC

Subject

General Engineering

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线,采集、加工和组织学术论文而形成的新型学术文献查询和分析系统,可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容,当前同舟云学术共收录了国内外主流学术期刊6万余种,收集的期刊论文及会议论文总量共计约1.5亿篇,并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询!咨询电话:010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号  京ICP备18003416号-3