Implication of oxygen vacancies on current conduction mechanisms in TiN/Zr1−xAlxO2/TiN metal-insulator-metal structures-Reference-Cited by-同舟云学术

Implication of oxygen vacancies on current conduction mechanisms in TiN/Zr1−xAlxO2/TiN metal-insulator-metal structures

Published:2011-04 Issue:7 Volume:109 Page:076101
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Paskaleva A.,Lemberger M.,Bauer A. J.,Frey L.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3565056

Reference11 articles.

1. BTI characteristics and mechanisms of metal gated HfO/sub 2/ films with enhanced interface/bulk process treatments

2. Charge Trapping in High-k Gate Dielectrics: A Recent Understanding

3. M. Aoulaiche, M. Houssa, R. Degraeve, G. Groeseneken, S. DeGendt, and M. M. Heyns, Proc. of 35th European Solid State Device Research Conference (Grenoble, France, 12–16 September, 2005), p. 197.

4. Impact of interface variations on J–V and C–V polarity asymmetry of MIM capacitors with amorphous and crystalline Zr(1−x)AlxO2 films

5. Influence of the amorphous/crystalline phase of Zr1−xAlxO2 high-k layers on the capacitance performance of metal insulator metal stacks

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