Improving positive and negative bias illumination stress stability in parylene passivated IGZO transistors-Reference-Cited by-同舟云学术

Improving positive and negative bias illumination stress stability in parylene passivated IGZO transistors

Published:2016-08 Issue:5 Volume:109 Page:051606
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Kiazadeh Asal¹²,Gomes Henrique L.²³,Barquinha Pedro¹,Martins Jorge¹,Rovisco Ana¹^ORCID,Pinto Joana V.¹,Martins Rodrigo¹,Fortunato Elvira¹

Affiliation:

1. Department of Materials Science, i3N/CENIMAT, Faculty of Science and Technology, Universidade NOVA de Lisboa and CEMOP/UNINOVA, Campus de Caparica, 2829-516 Caparica, Portugal

2. Universidade do Algarve, FCT, 8000-139 Faro, Portugal

3. IT-Instituto de Telecomunicações, Av. Rovisco, Pais, 1, 1049-001 Lisboa, Portugal

Funder

European Commission (EC)

Fundação para a Ciência e a Tecnologia (FCT)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4960200

Reference22 articles.

2. A framework for assessing amorphous oxide semiconductor thin-film transistor passivation

3. Gate-bias stress in amorphous oxide semiconductors thin-film transistors

4. Light illumination stability of amorphous InGaZnO thin film transistors with sputtered AlOxpassivation in various thicknesses

5. Passivation of ZnO TFTs

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