Light illumination stability of amorphous InGaZnO thin film transistors with sputtered AlOxpassivation in various thicknesses
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
http://stacks.iop.org/1347-4065/53/i=12/a=121103/pdf
Reference24 articles.
1. Carrier transport and electronic structure in amorphous oxide semiconductor, a-InGaZnO4
2. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors
3. Amorphous oxide channel TFTs
4. Influence of channel layer and passivation layer on the stability of amorphous InGaZnO thin film transistors
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