Synergistic improvement of device performance and bias stress stability of IGZO TFT via back-channel graded nitrogen doping
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference15 articles.
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2. Performance Improvement of a-In-Ga-Sn-O Thin-Film Transistor with Oxygen Doping by Reactive Sputtering Method;Journal of Electronic Materials;2024-04-11
3. Preparation and study of double channel heterojunction IGTO/IGZO thin film transistor;Micro and Nanostructures;2024-04
4. Performance Improvement of Amorphous Thin-Film Transistors With Solution-Processed InZnO/InMgZnO Bilayer Channels;IEEE Transactions on Electron Devices;2023-08
5. Performance of Transparent Indium–Gallium–Zinc Oxide Thin Film Transistor Prepared by All Plasma Enhanced Atomic Layer Deposition;IEEE Electron Device Letters;2023-03
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