A framework for assessing amorphous oxide semiconductor thin-film transistor passivation-Reference-Cited by-同舟云学术

A framework for assessing amorphous oxide semiconductor thin-film transistor passivation

Published:2012-10 Issue:10 Volume:20 Page:589-595
ISSN:1071-0922
Container-title:Journal of the Society for Information Display
language:en
Short-container-title:Jnl Soc Info Display

Author:

Wager John F.¹,Hoshino Ken¹,Sundholm Eric S.¹,Presley Rick E.¹,Ravichandran Ram¹,Knutson Christopher C.²,Keszler Douglas A.²,Hoffman Randy L.³,Mourey Devin A.³,Robertson John⁴

Affiliation:

1. School of EECS; Oregon State University; Corvallis; Oregon; 97331-5501; USA

2. Department of Chemistry; Oregon State University; Corvallis; OR; 97331-4003; USA

3. Hewlett-Packard Company; Corvallis; OR; 97330-4239; USA

4. Department of Engineering; Cambridge University; Cambridge; CB2 1PZ; UK

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference14 articles.

1. J. F. Wager Oxide electronics for displays SID Webinar 2012

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3. “Present status of amorphous In-Ga-Zn-O thin-film transistors;Kamiya;Sci. Tech. Adv. Mater.,2010

4. “Comprehensive studies of the degradation mechanism in amorphous InGaZnO transistors by the negative bias illumination stress;Ji;Microelectron. Eng.,2011

5. “Passivation of amorphous oxide semiconductors utilizing a zinc tin silicon oxide barrier layer;Sundholm;IEEE Trans. Electron Dev. Lett.,2012

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