Interfacial Chemistry-Induced Modulation of Schottky Barrier Heights: In Situ Measurements of the Pt–Amorphous Indium Gallium Zinc Oxide Interface Using X-ray Photoelectron Spectroscopy-Reference-Cited by-同舟云学术

Interfacial Chemistry-Induced Modulation of Schottky Barrier Heights: In Situ Measurements of the Pt–Amorphous Indium Gallium Zinc Oxide Interface Using X-ray Photoelectron Spectroscopy

Published:2018-01-18 Issue:4 Volume:10 Page:4333-4340
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Flynn Brendan T.¹,Oleksak Richard P.¹,Thevuthasan Suntharampillai²,Herman Gregory S.¹^ORCID

Affiliation:

1. School of Chemical, Biological and Environmental Engineering, Oregon State University, Corvallis, Oregon 97331, United States

2. Environmental Molecular Sciences Laboratory, Pacific Northwest National Laboratory, Richland, Washington 99352, United States

Funder

Oregon Nanoscience and Microtechnologies Institute

Semiconductor Research Corporation

Sharp Laboratories of America

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.7b18674

Reference60 articles.

1. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors

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3. Transparent, High-Performance Thin-Film Transistors with an InGaZnO/Aligned-SnO2-Nanowire Composite and their Application in Photodetectors

4. Diffusion-Limited a-IGZO/Pt Schottky Junction Fabricated at 200 $^{\circ}\hbox{C}$ on a Flexible Substrate

5. High-performance a-In-Ga-Zn-O Schottky diode with oxygen-treated metal contacts

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