Strategies for High-Performance Amorphous Indium–Gallium–Zinc Oxide Schottky Contact via Defect-Induced Physical Interface Modification-Reference-Cited by-同舟云学术

Strategies for High-Performance Amorphous Indium–Gallium–Zinc Oxide Schottky Contact via Defect-Induced Physical Interface Modification

Published:2021-04-15 Issue:4 Volume:3 Page:1864-1872
ISSN:2637-6113
Container-title:ACS Applied Electronic Materials
language:en
Short-container-title:ACS Appl. Electron. Mater.

Author:

Lee Donggun¹,Park Jun-Woo¹,Kim Kyungho¹²,Kim Heebae¹,Kim Youn Sang¹³⁴^ORCID

Affiliation:

1. Program in Nano Science and Technology, Graduate School of Convergence Science and Technology, Seoul National University, Seoul 08826, Republic of Korea

2. Samsung Display Company, Ltd., Yongin-si 17113, Republic of Korea

3. School of Chemical & Biological Engineering, and Institute of Chemical Processes, Seoul National University, Seoul 08826, Republic of Korea

4. Advanced Institute of Convergence Technology, Suwon-si 16229, Republic of Korea

Funder

National Research Foundation of Korea

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaelm.1c00104

Reference33 articles.

1. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors

2. Subthreshold Schottky-barrier thin-film transistors with ultralow power and high intrinsic gain

3. Metal oxides for optoelectronic applications

4. High Performance Indium‐Gallium‐Zinc Oxide Thin Film Transistor via Interface Engineering

5. Ionic Liquid Activation of Amorphous Metal-Oxide Semiconductors for Flexible Transparent Electronic Devices

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