Ionic Liquid Activation of Amorphous Metal-Oxide Semiconductors for Flexible Transparent Electronic Devices-Reference-Cited by-同舟云学术

Ionic Liquid Activation of Amorphous Metal-Oxide Semiconductors for Flexible Transparent Electronic Devices

Published:2016-02-09 Issue:17 Volume:26 Page:2820-2825
ISSN:1616-301X
Container-title:Advanced Functional Materials
language:en
Short-container-title:Adv. Funct. Mater.

Author:

Pudasaini Pushpa Raj¹,Noh Joo Hyon¹,Wong Anthony T.¹,Ovchinnikova Olga S.²,Haglund Amanda V.¹,Dai Sheng³,Ward Thomas Zac⁴,Mandrus David¹⁴,Rack Philip D.¹⁵

Affiliation:

1. Department of Materials Science and Engineering; University of Tennessee; Knoxville TN 37996 USA

2. Center for Nanophase Materials Sciences and the Institute for Functional Imaging of Materials; Oak Ridge National Laboratory; Oak Ridge TN 37931 USA

3. Chemical Sciences Division; Oak Ridge National Laboratory; Oak Ridge TN 37831 USA

4. Materials Science and Technology Division; Oak Ridge National Laboratory; Oak Ridge TN 37831 USA

5. Center for Nanophase Materials Sciences; Oak Ridge National Laboratory; Oak Ridge TN 37831 USA

Funder

Gordon and Betty Moore Foundation's EPiQS Initiative

U.S. DOE

Publisher

Wiley

Subject

Electrochemistry,Condensed Matter Physics,Biomaterials,Electronic, Optical and Magnetic Materials

Reference46 articles.

1. Wafer-scale design of lightweight and transparent electronics that wraps around hairs

2. All-Solution-Processed Transparent Thin Film Transistor and Its Application to Liquid Crystals Driving

3. Amorphous oxide TFT and their applications in electrophoretic displays

4. Semiconducting metal oxide sensor array for the selective detection of combustion gases

5. Oxide Semiconductor Thin-Film Transistors: A Review of Recent Advances

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