Stress determination in nickel monosilicide films using x-ray diffraction
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3236626
Reference26 articles.
1. Piezoresistance Effect in Germanium and Silicon
2. An off-normal fibre-like texture in thin films on single-crystal substrates
3. Silicide-induced stress in Si: origin and consequences for MOS technologies
4. Materials aspects, electrical performance, and scalability of Ni silicide towards sub-0.13 μm technologies
5. Characterization of Ni- and Ni(Pt)-Silicide Formation on Narrow Polycrystalline Si Lines by Raman Spectroscopy
Cited by 10 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Impact of additional Pt and NiSi crystal orientation on channel stress induced by Ni silicide film in metal–oxide–semiconductor field-effect transistors;Japanese Journal of Applied Physics;2014-01-01
2. Analysis of Channel Stress Induced by NiPt-Silicide in Metal–Oxide–Semiconductor Field-Effect Transistor and Its Generation Mechanism;Japanese Journal of Applied Physics;2013-09-01
3. Weighted mechanical models for residual stress determination using x-ray diffraction;Journal of Applied Physics;2013-07-21
4. Equivalence of Kröner and weighted Voigt-Reuss models for x-ray stress determination;Journal of Applied Physics;2013-04-21
5. High-pressure phase transitions and equations of state in NiSi. III. A new high-pressure phase of NiSi;Journal of Applied Crystallography;2013-01-17
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