Impact of additional Pt and NiSi crystal orientation on channel stress induced by Ni silicide film in metal–oxide–semiconductor field-effect transistors-Reference-Cited by-同舟云学术

Impact of additional Pt and NiSi crystal orientation on channel stress induced by Ni silicide film in metal–oxide–semiconductor field-effect transistors

Published:2014-01-01 Issue:4S Volume:53 Page:04EA02
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Mizuo Mariko,Yamaguchi Tadashi,Kudo Shuichi,Hirose Yukinori,Kimura Hiroshi,Tsuchimoto Jun-ichi,Hattori Nobuyoshi

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference30 articles.

1. Self-aligned nickel-mono-silicide technology for high-speed deep submicrometer logic CMOS ULSI

2. Thickness scaling issues of Ni silicide

3. Study of formation mechanism of nickel silicide discontinuities in high performance CMOS devices

4. Mechanism of Contact Resistance Reduction in Nickel Silicide Films by Pt Incorporation

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. The effect of the second annealing step on the Ni1-xPtx:Si film thermal stability;Microelectronic Engineering;2017-03

2. Effective Schottky barrier lowering of Ni silicide/p-Si(100) using an ytterbium confinement structure for high performance n-type MOSFETs;Materials & Design;2017-01

3. PdYb-Silicide with Low Schottky Barrier Height to n-Si Formed from Pd/Yb/Si(100) Stacked Structures;IEICE Transactions on Electronics;2017

4. Ultra-low Contact Resistivity of PtHf Silicide Utilizing Dopant Segregation Process;Journal of Electronic Materials;2016-10-20

5. PtHf Silicide Formation Utilizing PtHf-Alloy Target for Low Contact Resistivity;IEICE Transactions on Electronics;2016