Mechanism for Si island retention in buried SiO2 layers formed by oxygen ion implantation
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.119353
Reference8 articles.
1. Analysis of buried oxide layer formation and mechanism of threading dislocation generation in the substoichiometric oxygen dose region
2. Epitaxial Growth of SiO2Produced in Silicon by Oxygen Ion Implantation
3. Electrical and structural characteristics of thin buried oxides
4. Characterization of structural defects in annealed silicon containing oxygen
5. Early stages of oxygen segregation and precipitation in silicon
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1. Formation of silicon nanoislands on crystalline silicon substrates by thermal annealing of silicon rich oxide deposited by low pressure chemical vapour deposition;Nanotechnology;2006-09-15
2. INVESTIGATION ON THE MICROSCOPIC STRUCTURE OF E′δ CENTER IN AMORPHOUS SILICON DIOXIDE BY ELECTRON PARAMAGNETIC RESONANCE SPECTROSCOPY;Modern Physics Letters B;2006-04-10
3. Mechanisms of positive charge generation in buried oxide of UNIBOND and separation by implanted oxygen silicon-on-insulator structures during high-field electron injection;Journal of Applied Physics;2003-08
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