Electrical and structural characteristics of thin buried oxides
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference12 articles.
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1. Analysis of Buried-Oxide Dielectric Breakdown Mechanism in Low-Dose Separation by Implanted Oxygen (SIMOX) Substrates Fabricated by Internal Thermal Oxidation (ITOX) Process;Japanese Journal of Applied Physics;1999-04-30
2. Local Tunnel Emission Assisted by Inclusions Contained in Buried Oxides;Fundamental Aspects of Ultrathin Dielectrics on Si-based Devices;1998
3. Mechanism for Si island retention in buried SiO2 layers formed by oxygen ion implantation;Applied Physics Letters;1997-10-13
4. Structural inhomogeneity and silicon enrichment of buried SiO2 layers formed by oxygen ion implantation in silicon;Journal of Applied Physics;1997-09
5. The fluence spectrum allowing the formation of a connected buried layer in silicon by oxygen implantation;Semiconductor Science and Technology;1996-03-01
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