Mechanisms of positive charge generation in buried oxide of UNIBOND and separation by implanted oxygen silicon-on-insulator structures during high-field electron injection-Reference-Cited by-同舟云学术

Mechanisms of positive charge generation in buried oxide of UNIBOND and separation by implanted oxygen silicon-on-insulator structures during high-field electron injection

Published:2003-08 Issue:3 Volume:94 Page:1823-1832
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Nazarov A. N.,Kilchytska V. I.,Houk Y.,Ballutaud D.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.1589591

Reference39 articles.

1. Hot-carrier-induced degradation of the back interface in short-channel silicon-on-insulator MOSFETS

2. Electron trapping studies in multiple- and single-implant SIMOX oxides

3. Electrical characterization of thin film, thin buried oxide SIMOX SOI substrates produced by low-energy, low-dose implantation

4. Radio frequency plasma annealing of positive charge generated by Fowler–Nordheim electron injection in buried oxides in silicon

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