Electron trapping studies in multiple- and single-implant SIMOX oxides
Author:
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://stacks.iop.org/0268-1242/9/i=5/a=011/pdf
Reference32 articles.
1. Irradiation-induced ESR active defects in SIMOX structures
2. High Temperature Annealing of Simox Layers Physical Mechanisms of Oxygen Segregation
3. Electron trapping in SiO/sub 2/ formed by oxygen implantation
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1. Electrical properties of multiple-layer structures formed by implantation of nitrogen or oxygen and annealed under high pressure;Journal of Applied Physics;2006-02
2. Mechanisms of positive charge generation in buried oxide of UNIBOND and separation by implanted oxygen silicon-on-insulator structures during high-field electron injection;Journal of Applied Physics;2003-08
3. Behavior of charge in a buried insulator of silicon-on-insulator structures subjected to electric fields;Semiconductors;2002-07
4. Charge Carrier Injection and Trapping in the Buried Oxides of SOI Structures;Progress in SOI Structures and Devices Operating at Extreme Conditions;2002
5. Hydrogen-Related Phenomena in SOI Fabricated by Using H+-Ion Implantation;Solid State Phenomena;2001-11
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