Author:
Antonova Irina V.,Misiuk Andrzej,Londos Charalampos A.
Subject
General Physics and Astronomy
Reference21 articles.
1. P. L. F. Hemment, The SOI Odyssey, Proceedings of the International Symposium on Silicon-on-Insulator Technology and Devices XI, edited by S. Cristoloveanu, G. K. Celler, J. G. Fossum, F. Gamiz, K. Izumi, and Y-W Kim (Electrochemical Society, Pennington, NJ, 2003), Vol. PV-2003-05, p. 1.
2. Improvement in buried silicon nitride silicon-on-insulator structures by fluorine-ion implantation
3. Buried layers of silicon oxy-nitride fabricated using ion beam synthesis
4. Formation of total-dose-radiation hardened materials by sequential oxygen and nitrogen implantation and multi-step annealing
5. Influence of high pressure and temperature on defect structure of silicon crystals implanted with N or Si ions
Cited by
10 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献