Epitaxial Growth of SiO2Produced in Silicon by Oxygen Ion Implantation
Author:
Publisher
American Physical Society (APS)
Subject
General Physics and Astronomy
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.77.4206/fulltext
Reference20 articles.
1. Models for the oxidation of silicon
2. Si→SiO2transformation: Interfacial structure and mechanism
3. Minority carrier lifetime in annealed silicon crystals containing oxygen
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