Direct imaging of Si incorporation in GaAs masklessly grown on patterned Si substrates
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.105020
Reference17 articles.
1. Growth of GaAs on Si by MOVCD
2. AlGaAs heterojunction visible (700 nm) light‐emitting diodes on Si substrates fabricated by metalorganic chemical vapor deposition
3. Monolithic integration of GaAs/AlGaAs modulation‐doped field‐effect transistors andN‐metal‐oxide‐semiconductor silicon circuits
4. Room‐temperature operation of GaAs/AlGaAs diode lasers fabricated on a monolithic GaAs/Si substrate
Cited by 17 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Retraction: “Direct imaging of Si incorporation in GaAs masklessly grown on patterned Si substrates” [Appl. Phys. Lett. 58, 2090 (1991)];Applied Physics Letters;2023-06-19
2. Origin of Selective Growth of GaN on Maskless V-Grooved Sapphire Substrates by Metalorganic Chemical Vapor Deposition;Japanese Journal of Applied Physics;2005-07-22
3. Formation of segregated cell structure for MBE growth of mismatched semiconductors;Thin Solid Films;1997-09
4. Linearly polarized and time-resolved cathodoluminescence study of strain-induced laterally ordered (InP)2/(GaP)2 quantum wires;Journal of Applied Physics;1997-05-15
5. Effect of interface defect formation on carrier diffusion and luminescence in In0.2Ga0.8As/AlxGa1−xAs quantum wells;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1996-07
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