Pr2O3 on Si(001): A commensurate interfacial layer overgrown by silicate
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2743945
Reference19 articles.
1. Towards understanding epitaxial growth of alternative high-K dielectrics on Si(001): Application to praseodymium oxide
2. High-K Dielectrics: The Example of Pr2O3
3. Reflection high-energy electron diffraction study of molecular beam epitaxy growth of Pr2O3 on Si(001)
4. Growth of crystalline praseodymium oxide on silicon
5. Epitaxial praseodymium oxide: a new high-K dielectric
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3. Growth of praseodymium oxide on Si(111) under oxygen-deficient conditions;Physical Review B;2009-07-15
4. Engineered Si wafers: On the role of oxide heterostructures as buffers for the integration of alternative semiconductors;physica status solidi (c);2009-03
5. Structure dependence of epitaxial Pr[sub 2]O[sub 3]∕Si(001) on oxygen pressure during growth;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2009
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