Towards understanding epitaxial growth of alternative high-K dielectrics on Si(001): Application to praseodymium oxide
Author:
Publisher
American Vacuum Society
Subject
General Engineering
Cited by 65 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Interfacial layer formation during the growth of Gd2O3 on Si(001) and its thermal stability;Semiconductor Science and Technology;2021-10-19
2. Formation of self-assembled Gd2O3 nanowire-like structures during epitaxial growth on Si(001);RSC Advances;2021
3. Formation of neodymium oxide by thermal oxidation of sputtered Nd thin film on Si substrate;Journal of Materials Science: Materials in Electronics;2017-04-29
4. Epitaxial lanthanide oxide thin films on Si for high-k gate dielectric application: Growth optimization and defect passivation;Journal of Materials Research;2017-02-08
5. Structure of Pr Oxide Films on Si Deposited by Reactive Sputtering;ECS Transactions;2016-08-19
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