Epitaxial praseodymium oxide: a new high-K dielectric
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference9 articles.
1. High-K gate dielectrics with ultra-low leakage current based on praseodymium oxide, Techn. Digest IEDM;Osten,2000
2. Growth of crystalline praseodymium oxide on silicon;Osten;J. Cryst. Growth,2002
3. In situ RHEED observation of CeO2 film growth on Si by laser ablation deposition in ultrahigh-vacuum;Yoshimoto;Jpn. J. Appl. Phys.,1990
4. Epitaxial growth of Pr2O3 on Si(111) and the observation of a hexagonal to cubic phase transition during postgrowth N2 annealings;Liu;Appl. Phys. Lett.,2001
5. Photoemission and ab initio theoretical study of interface and film formation during epitaxial growth and annealing of praseodymium oxide on Si(001);Fissel;J. Appl. Phys.,2002
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2. Controlled synthesis of praseodymium oxide nanoparticles obtained by combustion route: Effect of calcination temperature and fuel to oxidizer ratio;Applied Surface Science;2019-03
3. Epitaxial Systems Combining Oxides and Semiconductors;Molecular Beam Epitaxy;2018
4. GaAs metal-oxide-semiconductor push with molecular beam epitaxy Y2O3 – In comparison with atomic layer deposited Al2O3;Journal of Crystal Growth;2017-11
5. Lanthanide rare earth oxide thin film as an alternative gate oxide;Materials Science in Semiconductor Processing;2017-09
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