Lanthanide rare earth oxide thin film as an alternative gate oxide-Reference-Cited by-同舟云学术

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Lanthanide rare earth oxide thin film as an alternative gate oxide

Published:2017-09 Issue: Volume:68 Page:302-315
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Goh Kian Heng,Haseeb A.S.M.A.,Wong Yew Hoong

Funder

ScienceFund

Fundamental Research Grant Scheme

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference228 articles.

1. High-κ gate dielectrics: Current status and materials properties considerations

2. High dielectric constant oxides

3. High-K materials and metal gates for CMOS applications

4. Future semiconductor material requirements and innovations as projected in the ITRS 2005 roadmap

5. International Technology Roadmap for Semiconductors (ITRS), 2008.

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