Combined vertically correlated InAs and GaAsSb quantum dots separated by triangular GaAsSb barrier
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4829027
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4. A. Hospodková,Capping of InAs/GaAs Quantum Dots for GaAs Based Lasers Quantum Dots–A variety of New Applications, edited by A. Al-Ahmadi (InTech Open Access, Rijeka, 2012), pp. 27–46.
5. Graded GaAsSb strain reducing layers covering InAs/GaAs quantum dots
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1. Effects of In, Sb and N Alloyed Capping on the Electronic Band Structures of Vertically Coupled InAs SK-SML Quantum Dot System;IEEE Transactions on Nanotechnology;2021
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3. Comparison of MOVPE grown GaAs, InGaAs and GaAsSb covering layers for different InAs/GaAs quantum dot applications;Journal of Crystal Growth;2017-04
4. GaAsSb spacer effect in quasi-type-II InAs coupled-QDs for intraband absorption enhancement;Optical Materials Express;2017-03-23
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