GaAsSb spacer effect in quasi-type-II InAs coupled-QDs for intraband absorption enhancement-Reference-Cited by-同舟云学术

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GaAsSb spacer effect in quasi-type-II InAs coupled-QDs for intraband absorption enhancement

Published:2017-03-23 Issue:4 Volume:7 Page:1351
ISSN:2159-3930
Container-title:Optical Materials Express
language:en
Short-container-title:Opt. Mater. Express

Author:

Feng David Jui-Yang,Lin Yen-Ju,Ku Yun-Cheng,Jhang Han-Yun,Lin Tzy-Rong,Kuo Mao-Kuen

Funder

Ministry of Science and Technology, Taiwan (MOST)

Publisher

The Optical Society

Subject

Electronic, Optical and Magnetic Materials

Reference20 articles.

1. Increasing the Efficiency of Ideal Solar Cells by Photon Induced Transitions at Intermediate Levels

2. Detailed Balance Limit of Efficiency of p‐n Junction Solar Cells

3. Absorption characteristics of a quantum dot array induced intermediate band: Implications for solar cell design

4. Intermediate-band solar cells: Influence of band formation on dynamical processes in InAs/GaAs quantum dot arrays

5. The influence of quantum dot size on the sub-bandgap intraband photocurrent in intermediate band solar cells

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1. Investigation of type-II Ga(As)Sb/GaAs quantum dots embedded in an InGaAs quantum well for solar cell applications;Solid State Communications;2023-06

2. An Ab Initio Study of Clusters as Building Blocks for Crystals: From Prussian Blue Analogs to Hybrid Perovskites;physica status solidi (b);2022-05-24

3. Hot-carrier photocatalysts for artificial photosynthesis;The Journal of Chemical Physics;2022-04-28

4. Hot‐carrier solar cells and improved types using wide‐bandgap energy‐selective contacts;Progress in Photovoltaics: Research and Applications;2021-08-30

5. Quantum engineering of intrinsic losses in the diluted nitride InAsN quantum dot intermediate band solar cell;Journal of Photonics for Energy;2019-10-30

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