Graded GaAsSb strain reducing layers covering InAs/GaAs quantum dots
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference14 articles.
1. Self-assembled InAs/GaAs quantum dots covered by different strain reducing layers exhibiting strong photo- and electroluminescence in 1.3 and 1.55μm bands;Hazdra;Journal of Nanoscience and Nanotechnology,2011
2. Interplay between thermodynamics and kinetics in the capping of InAs/GaAs (001) quantum dots;Costantini;Physical Review Letters,2006
3. GaAsSb-capped InAs quantum dots: from enlarged quantum dot height to alloy fluctuations;Ulloa;Physical Review B,2010
4. InGaAs and GaAsSb strain reducing layers covering InAs/GaAs quantum dots;Hospodková;Journal of Crystal Growth,2010
5. Long-wavelength light emission and lasing from InAs/GaAs quantum dots covered by a GaAsSb strain-reducing layer;Liu;Applied Physics Letters,2005
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