InGaAs and GaAsSb strain reducing layers covering InAs/GaAs quantum dots-Reference-Cited by-同舟云学术

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InGaAs and GaAsSb strain reducing layers covering InAs/GaAs quantum dots

Published:2010-04 Issue:8 Volume:312 Page:1383-1387
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Hospodková A.,Hulicius E.,Pangrác J.,Oswald J.,Vyskočil J.,Kuldová K.,Šimeček T.,Hazdra P.,Caha O.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference12 articles.

1. Nano-Optoelectronics,2002

2. MBE-grown metamorphic lasers for applications at telecom wavelengths

3. Long-wavelength light emission and lasing from InAs∕GaAs quantum dots covered by a GaAsSb strain-reducing layer

4. Interplay between Thermodynamics and Kinetics in the Capping ofInAs/GaAs(001)Quantum Dots

5. Growth and properties of InAs/InxGa1−xAs/GaAs quantum dot structures

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1. Influence of the Arsenic Pressure during Rapid Overgrowth of InAs/GaAs Quantum Dots on Their Photoluminescence Properties;Crystals;2023-09-08

2. Quantum efficiency and oscillator strength of InGaAs quantum dots for single-photon sources emitting in the telecommunication O-band;Applied Physics Letters;2021-08-09

3. Comparison of MOVPE grown GaAs, InGaAs and GaAsSb covering layers for different InAs/GaAs quantum dot applications;Journal of Crystal Growth;2017-04

4. Emission wavelength control in InAs(Sb) quantum dashes-in-a-well structures;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2016-03

5. Growth and properties of the MOVPE GaAs/InAs/GaAsSb quantum dot structures;Physica B: Condensed Matter;2016-01

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