Growth and properties of InAs/InxGa1−xAs/GaAs quantum dot structures-Reference-Cited by-同舟云学术

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Growth and properties of InAs/InxGa1−xAs/GaAs quantum dot structures

Published:2008-04 Issue:7-9 Volume:310 Page:2229-2233
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Hulicius Eduard,Oswald Jiří,Pangrác Jiří,Vyskočil Jan,Hospodková Alice,Kuldová Karla,Melichar Karel,Šimeček Tomislav

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference7 articles.

1. Quantum dots for lasers, amplifiers and computing

2. Properties of MOVPE InAs/GaAs quantum dots overgrown by InGaAs

3. A narrow photoluminescence linewidth of 21 meV at 1.35 μm from strain-reduced InAs quantum dots covered by In0.2Ga0.8As grown on GaAs substrates

4. Lateral shape of InAs/GaAs quantum dots in vertically correlated structures

5. In situ monitoring of InAs-on-GaAs quantum dot formation in MOVPE by reflectance-anisotropy-spectroscopy and ellipsometry

Cited by 16 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Strong suppression of In desorption from InGaN QW by improved technology of upper InGaN/GaN QW interface;Journal of Crystal Growth;2019-02

2. Comparison of MOVPE grown GaAs, InGaAs and GaAsSb covering layers for different InAs/GaAs quantum dot applications;Journal of Crystal Growth;2017-04

3. Growth and properties of the MOVPE GaAs/InAs/GaAsSb quantum dot structures;Physica B: Condensed Matter;2016-01

4. InAs quantum dot emission and annealing impact in quantum wells with strain reduced InAlGaAs layers;Journal of Luminescence;2015-07

5. Self-Assembly in Semiconductor Epitaxy;Handbook of Crystal Growth;2015

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