Properties of MOVPE InAs/GaAs quantum dots overgrown by InGaAs
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference11 articles.
1. Structure and optical properties of self-assembled InAs/GaAs quantum dots with In0.15Ga0.85As underlying layer
2. High performance quantum dot lasers on GaAs substrates operating in 1.5 [micro sign]m range
3. Strain engineered InAs/GaAs quantum dots for 1.5 μm emitters
4. Long-wavelength light emission from InAs quantum dots covered by GaAsSb grown on GaAs substrates
5. Structural studies of a combined InAlAs–InGaAs capping layer on 1.3-μm Inas/GaAs quantum dots
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1. InAs quantum emitters at telecommunication wavelengths grown by droplet epitaxy;Journal of Vacuum Science & Technology A;2023-04-10
2. MOVPE grown InGaAs quantum dots with emission near 1.3 μm for electrically driven single-photon sources;Journal of Crystal Growth;2023-03
3. InAs quantum dots grown on metamorphic buffers as non-classical light sources at telecom C-band: a review;Semiconductor Science and Technology;2019-04-10
4. Structural and Optical Characterization of Quaternary-Capped InAs/GaAs Quantum Dots;Quaternary Capped In(Ga)As/GaAs Quantum Dot Infrared Photodetectors;2017-09-07
5. Structural and Optical Characterization of Bilayer QD Heterostructures;Structural, Optical and Spectral Behaviour of InAs-based Quantum Dot Heterostructures;2017-08-05
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