Long-wavelength light emission from InAs quantum dots covered by GaAsSb grown on GaAs substrates
Author:
Publisher
Elsevier BV
Subject
Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
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5. Over 1.5 μm light emission from InAs quantum dots embedded in InGaAs strain-reducing layer grown by metalorganic chemical vapor deposition
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1. InGaAsSb/GaAsSb quantum dot structures;Micro & Nano Letters;2023-02
2. Hybrid Structure of Semiconductor Quantum Well Superlattice and Quantum Dot;Quantum Science and Technology;2022
3. Influence of the excitation density and temperature on the optical properties of type I InAs/GaAsSb quantum dots;Journal of Luminescence;2020-09
4. Size and Shape Evolution of GaAsSb-Capped InAs/GaAs Quantum Dots: Dependence on the Sb Content;Crystals;2019-10-15
5. Quantum Dots;Metalorganic Vapor Phase Epitaxy (MOVPE);2019-08-30
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