Morphological evolution of InGaN/GaN light-emitting diodes grown on free-standing m-plane GaN substrates
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4790636
Reference31 articles.
1. P-GaN/N-InGaN/N-GaN Double-Heterostructure Blue-Light-Emitting Diodes
2. Status and Future of High-Power Light-Emitting Diodes for Solid-State Lighting
3. Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes
4. Strain-induced polarization in wurtzite III-nitride semipolar layers
5. High-Power Blue-Violet Semipolar ($20\bar{2}\bar{1}$) InGaN/GaN Light-Emitting Diodes with Low Efficiency Droop at 200 A/cm$^{2}$
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