On-chip 3D confocal optical study of an InGaN/GaN microrod LED in the low excitation regime
Author:
Affiliation:
1. Werkstoffe der Elektrotechnik and CENIDE, University of Duisburg-Essen, Bismarckstraße 81, 47057 Duisburg, Germany
2. OSRAM Opto Semiconductors GmbH, Leibnizstraße 4, 93055 Regensburg, Germany
Funder
Deutsche Forschungsgemeinschaft
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
https://aip.scitation.org/doi/pdf/10.1063/5.0049886
Reference44 articles.
1. Candela‐class high‐brightness InGaN/AlGaN double‐heterostructure blue‐light‐emitting diodes
2. High‐brightness InGaN/AlGaN double‐heterostructure blue‐green‐light‐emitting diodes
3. Reduction of oscillator strength due to piezoelectric fields inGaN/AlxGa1−xNquantum wells
4. Band-Edge Electroabsorption in Quantum Well Structures: The Quantum-Confined Stark Effect
5. Morphological evolution of InGaN/GaN light-emitting diodes grown on free-standing m-plane GaN substrates
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Local optical analysis of InGaN/GaN nanorod LED structures grown on Si(111);Journal of Applied Physics;2023-07-26
2. Progress and Challenges of InGaN/GaN-Based Core–Shell Microrod LEDs;Materials;2022-02-22
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