Effects of substrate and anode metal annealing on InGaZnO Schottky diodes
Author:
Affiliation:
1. Center of Nanoelectronics and School of Microelectronics, Shandong University, Jinan 250100, China
2. School of Electrical and Electronic Engineering, University of Manchester, Manchester M13 9PL, United Kingdom
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4973693
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3. Carrier transport and electronic structure in amorphous oxide semiconductor, a-InGaZnO4
4. Electronic transport properties of amorphous indium-gallium-zinc oxide semiconductor upon exposure to water
5. Present status of amorphous In–Ga–Zn–O thin-film transistors
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