Abstract
Abstract
The radiation effect of swift heavy ions (16 MeV 181Ta) on the Au/Ni/β-Ga2O3 vertical Schottky barrier diodes (SBDs) were investigated at the fluence of 1 × 108, 3 × 108 and 3 × 109 cm−2. The SBDs were characterized by current density–voltage (J–V) and capacitance–voltage (C–V) measurements. It was found that Schottky barrier height φ decreased from 1.11 eV to 0.94 eV, the ideality factor n increased from 1.01 to 1.29, turn-on voltage V
on increased from 0.52 V to 0.80 V after radiation of 3 × 109 cm−2. The reverse breakdown voltage was decreased from −405 V to −375 V, −350 V and −255 V after radiation of 1 × 108, 3 × 108 and 3 × 109 cm−2, respectively. In addition, the carrier concentration calculated from the capacitance–voltage curves was decreased significantly. Based on the G/ω–ω measurement results, the trap density at the Ni/β-Ga2O3 interface was extracted to be 2.89 × 1015–2.49 × 1016 cm−2 eV−1 and 2.18 × 1015–4.98 × 1016 cm−2 eV−1 with the energy level of 0.85–0.87 eV below the conduction band edge.
Funder
National Natural Science Foundation of China
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Cited by
1 articles.
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