Evidence of trap-assisted Auger recombination in low radiative efficiency MBE-grown III-nitride LEDs-Reference-Cited by-同舟云学术

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Evidence of trap-assisted Auger recombination in low radiative efficiency MBE-grown III-nitride LEDs

Published:2019-11-14 Issue:18 Volume:126 Page:184502
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Espenlaub Andrew C.¹^ORCID,Myers Daniel J.¹^ORCID,Young Erin C.¹^ORCID,Marcinkevičius Saulius²^ORCID,Weisbuch Claude¹³,Speck James S.¹

Affiliation:

1. Department of Materials, University of California, Santa Barbara, California 93106-5050, USA

2. Department of Applied Physics, KTH Royal Institute of Technology, Electrum 229, 16440 Kista, Sweden

3. Laboratoire de Physique de la Matière Condensée, CNRS, Ecole Polytechnique, IP Paris, 91128 Palaiseau, France

Funder

U.S. Department of Energy

Energimyndigheten

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/am-pdf/10.1063/1.5096773

Reference32 articles.

1. Auger recombination and impact ionization involving traps in semiconductors

2. Auger-generated hot carrier current in photo-excited forward biased single quantum well blue light emitting diodes

3. Direct Measurement of Auger Electrons Emitted from a Semiconductor Light-Emitting Diode under Electrical Injection: Identification of the Dominant Mechanism for Efficiency Droop

4. Identification of low-energy peaks in electron emission spectroscopy of InGaN/GaN light-emitting diodes

5. Carrier distribution in (0001)InGaN∕GaN multiple quantum well light-emitting diodes

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1. Investigation and modeling of the role of interface defects in the optical degradation of InGaN/GaN LEDs;Journal of Physics D: Applied Physics;2024-08-29

2. Properties of V-defect injectors in long wavelength GaN LEDs studied by near-field electro- and photoluminescence;Journal of Applied Physics;2024-08-26

3. First-principles calculations of defects and electron–phonon interactions: Seminal contributions of Audrius Alkauskas to the understanding of recombination processes;Journal of Applied Physics;2024-04-17

4. Injection mechanisms in a III -nitride light-emitting diode as seen by self-emissive electron microscopy;Physical Review Applied;2023-12-26

5. Evaluation of ambipolar diffusion coefficient in AlxGa1−xN semiconductor;Journal of Alloys and Compounds;2023-12

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