Molecular beam epitaxial growth and characterization of AlN nanowall deep UV light emitting diodes
Author:
Affiliation:
1. Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109, USA
2. Department of Electrical and Computer Engineering, McGill University, 3480 University Street, Montreal, Quebec H3A 0E9, Canada
Funder
Natural Sciences and Engineering Research Council of Canada (NSERC)
Army Research Office (ARO)
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/am-pdf/10.1063/1.4989551
Reference41 articles.
1. An aluminium nitride light-emitting diode with a wavelength of 210 nanometres
2. Ultraviolet light-emitting diodes based on group three nitrides
3. Deep-Ultraviolet Light-Emitting Diodes
4. Advances in group III-nitride-based deep UV light-emitting diode technology
5. High-performance UV emitter grown on high-crystalline-quality AlGaN underlying layer
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