Nanoscale AlGaN and BN: Molecular beam epitaxy, properties, and device applications
Author:
Funder
National Science Foundation
Army Research Office
Publisher
Elsevier
Reference147 articles.
1. 280 nm Deep Ultraviolet Light Emitting Diode Lamp with an AlGaN Multiple Quantum Well Active Region
2. Deep Ultraviolet Luminescence Due to Extreme Confinement in Monolayer GaN/Al(Ga)N Nanowire and Planar Heterostructures
3. Deep ultraviolet monolayer GaN/AlN disk-in-nanowire array photodiode on silicon
4. AlGaN Ultraviolet A and Ultraviolet C Photodetectors with Very High Specific DetectivityD*
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