Deep Ultraviolet Luminescence Due to Extreme Confinement in Monolayer GaN/Al(Ga)N Nanowire and Planar Heterostructures-Reference-Cited by-同舟云学术

Deep Ultraviolet Luminescence Due to Extreme Confinement in Monolayer GaN/Al(Ga)N Nanowire and Planar Heterostructures

Published:2019-10-01 Issue:11 Volume:19 Page:7852-7858
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Aiello Anthony¹^ORCID,Wu Yuanpeng¹,Pandey Ayush¹,Wang Ping¹,Lee Woncheol¹,Bayerl Dylan²,Sanders Nocona²^ORCID,Deng Zihao²,Gim Jiseok²,Sun Kai²^ORCID,Hovden Robert²,Kioupakis Emmanouil²^ORCID,Mi Zetian¹^ORCID,Bhattacharya Pallab¹

Affiliation:

1. Department of Electrical Engineering and Computer Science, University of Michigan, 1301 Beal Avenue, Ann Arbor, Michigan 48109, United States

2. Department of Materials Science and Engineering, University of Michigan, 1221 Beal Avenue, Ann Arbor, Michigan 48109, United States

Funder

Horace H. Rackham School of Graduate Studies, University of Michigan

Kwanjeong Educational Foundation

University of Michigan College of Engineering Blue Sky Research Program

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.nanolett.9b02847

Reference48 articles.

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3. An aluminium nitride light-emitting diode with a wavelength of 210 nanometres

4. Ultraviolet light-emitting diodes based on group three nitrides

5. Deep-Ultraviolet Light-Emitting Diodes

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