The 1.380‐ and 1.360‐eV photoluminescence transitions in undoped InP grown by molecular‐beam epitaxy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.340368
Reference9 articles.
1. High quality InP grown by molecular beam epitaxy
2. Influence of growth conditions on undoped and sulfur‐doped InP grown by molecular‐beam epitaxy
3. Identification of the major residual donor in unintentionally doped InP grown by molecular beam epitaxy
4. An investigation of the 1.36 eV photoluminescence spectrum of heat-treated InP using Zeeman spectroscopy and strain effects
5. MOCVD growth and characterization of high quality InP
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2. The effect of Bi composition on the properties of InP1−xBix grown by liquid phase epitaxy;Journal of Applied Physics;2014-05-07
3. Growth of InP on GaAs (001) by hydrogen-assisted low-temperature solid-source molecular beam epitaxy;Journal of Applied Physics;2008-01
4. Photoluminescence study of interfaces between heavily doped Al0.48In0.52As:Si layers and InP (Fe) substrates;Journal of Applied Physics;2002-06
5. Electrical and optical properties of Be-doped InP grown at low temperature by solid source atomic layer molecular beam epitaxy;Journal of Applied Physics;1999-05
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