Positive bias temperature instability of HfO2-based gate stacks at reduced thermal budget for future CMOS technologies
Author:
Affiliation:
1. IMEC, Kapeldreef 75, 3001 Leuven, Belgium
2. Material Science Department, KU Leuven, 3000 Leuven, Belgium
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/5.0006110
Reference11 articles.
1. Thermal Stability Study of GaP/High-k Dielectrics Interfaces
2. Bias Temperature Instability Characteristics of n- and p-Type Field Effect Transistors Using HfO[sub 2] Gate Dielectrics and Metal Gate
3. Comphy — A compact-physics framework for unified modeling of BTI
4. Efficient physical defect model applied to PBTI in high-κ stacks
5. Identification of oxide defects in semiconductor devices: A systematic approach linking DFT to rate equations and experimental evidence
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3. Effect of high-radiation-dose-induced structural modifications of HfSiO4/n-Si on electrical characteristics;Radiation Physics and Chemistry;2022-07
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