Thermal Stability Study of GaP/High-k Dielectrics Interfaces-Reference-Cited by-同舟云学术

Thermal Stability Study of GaP/High-k Dielectrics Interfaces

Published:2017-08-10 Issue:20 Volume:4 Page:1700609
ISSN:2196-7350
Container-title:Advanced Materials Interfaces
language:en
Short-container-title:Adv. Mater. Interfaces

Author:

Wang Xinglu¹,Zhao Yanfei²,Huang Rong²,Li Fangsen²,Lu Xiaoming²,Huang Zengli²,Shen Yang²,Wang Hu²,Shao Dawei¹,Liu Mengyin¹,Tan Baimei³,Zhang Jian²,Xie Xinjian⁴,Dingsun An²,Dong Hong¹

Affiliation:

1. College of Electronic Information and Optical Engineering; Nankai University; Tianjin 300071 P. R. China

2. Suzhou Institute of Nano-Tech and Nano-Bionics; China Academy of Sciences; Suzhou 215123 P. R. China

3. School of Electronic and Information Engineering; Hebei University of Technology; Tianjin 300130 P. R. China

4. School of Materials Science and Engineering; Hebei University of Technology; Tianjin 300130 P. R. China

Funder

National Natural Science Foundation of China

Fundamental Research Funds for the Central Universities

Natural Science Foundation of Tianjin City

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials

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3. Nanoscale Semiconductor “X” on Substrate “Y” - Processes, Devices, and Applications

4. Power-constrained CMOS scaling limits

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